High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga1− x ,Fe x )Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of...

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Veröffentlicht in:	Applied physics letters 2016-05, Vol.108 (19)
Hauptverfasser:	Tu, Nguyen Thanh, Hai, Pham Nam, Anh, Le Duc, Tanaka, Masaaki
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CURIE POINT Curie temperature Dichroism DOPED MATERIALS Epitaxial growth Ferromagnetic materials FERROMAGNETISM Group III-V semiconductors HALL EFFECT MAGNETIC CIRCULAR DICHROISM Magnetism MOLECULAR BEAM EPITAXY MOLECULAR BEAMS SPECTROSCOPY TEMPERATURE RANGE 0273-0400 K THIN FILMS
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Zusammenfassung:	We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga1− x ,Fe x )Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.4948692