Sequential control of step-bunching during graphene growth on SiC (0001)

Sequential control of step-bunching during graphene growth on SiC (0001)

We have investigated the relation between the step-bunching and graphene growth phenomena on an SiC substrate. We found that only a minimum amount of step-bunching occurred during the graphene growth process with a high heating rate. On the other hand, a large amount of step-bunching occurred using...

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Veröffentlicht in:Applied physics letters 2016-08, Vol.109 (8)
Hauptverfasser: Bao, Jianfeng, Yasui, Osamu, Norimatsu, Wataru, Matsuda, Keita, Kusunoki, Michiko
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Bunching
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONTROL
GRAPHENE
HEATING RATE
Sequential control
SILICON CARBIDES
SUBSTRATES
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Beschreibung
Zusammenfassung:We have investigated the relation between the step-bunching and graphene growth phenomena on an SiC substrate. We found that only a minimum amount of step-bunching occurred during the graphene growth process with a high heating rate. On the other hand, a large amount of step-bunching occurred using a slow heating process. These results indicated that we can control the degree of step-bunching during graphene growth by controlling the heating rate. We also found that graphene coverage suppressed step bunching, which is an effective methodology not only in the graphene technology but also in the SiC-based power electronics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4961630