Semiconducting ZnSn{sub x}Ge{sub 1−x}N{sub 2} alloys prepared by reactive radio-frequency sputtering

We report on the fabrication and structural and optoelectronic characterization of II-IV-nitride ZnSn{sub x}Ge{sub 1−x}N{sub 2} thin-films. Three-target reactive radio-frequency sputtering was used to synthesize non-degenerately doped semiconducting alloys having

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Veröffentlicht in:APL materials 2015-07, Vol.3 (7)
Hauptverfasser: Shing, Amanda M., Coronel, Naomi C., Lewis, Nathan S., Atwater, Harry A.
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Sprache:eng
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Zusammenfassung:We report on the fabrication and structural and optoelectronic characterization of II-IV-nitride ZnSn{sub x}Ge{sub 1−x}N{sub 2} thin-films. Three-target reactive radio-frequency sputtering was used to synthesize non-degenerately doped semiconducting alloys having
ISSN:2166-532X
2166-532X
DOI:10.1063/1.4927009