Lorentz factor determination for local electric fields in semiconductor devices utilizing hyper-thin dielectrics

The local electric field (the field that distorts, polarizes, and weakens polar molecular bonds in dielectrics) has been investigated for hyper-thin dielectrics. Hyper-thin dielectrics are currently required for advanced semiconductor devices. In the work presented, it is shown that the common practice of using a Lorentz factor of L = 1/3, to describe the local electric field in a dielectric layer, remains valid for hyper-thin dielectrics. However, at the very edge of device structures, a rise in the macroscopic/Maxwell electric field Ediel occurs and this causes a sharp rise in the effective Lorentz factor Leff. At capacitor and transistor edges, Leff is found to increase to a value 2/3