High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm2-sr and 1.06 W/cm2-sr for the 100 × 100 μm2 GaSb and GaAs-based devices, res...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of applied physics 2015-09, Vol.118 (12)
Hauptverfasser:	Provence, S. R., Ricker, R., Aytac, Y., Boggess, T. F., Prineas, J. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS COMPARATIVE EVALUATIONS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Current injection DISLOCATIONS Epitaxial growth EPITAXY GALLIUM ANTIMONIDES Gallium arsenide GALLIUM ARSENIDES INDIUM ARSENIDES Infrared radiation Lattice matching LIGHT EMITTING DIODES Low currents Misfit dislocations OPACITY Organic light emitting diodes QUANTUM EFFICIENCY Radiance RECOMBINATION Recombination coefficient SUBSTRATES SUPERLATTICES THERMODYNAMIC PROPERTIES
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm2-sr and 1.06 W/cm2-sr for the 100 × 100 μm2 GaSb and GaAs-based devices, respectively, were measured at 77 K. Measurement of the recombination coefficients shows the shorter Shockley-Read-Hall recombination lifetime as misfit dislocations for growth on GaAs degrade the quantum efficiency only at low current injection. The improved performance on GaAs was found to be due to the higher transparency and improved thermal properties of the GaAs substrate.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.4931914