Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering

Radio frequency (RF) biasing induced by a second plasma source at the substrate is applied to low-temperature sputtering processes for indium tin oxide (ITO) and titanium nitride (TiN) thin films. Investigations on crystal structure and surface morphology show that RF-biased substrate plasma process...

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Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2016-03, Vol.34 (2)
Hauptverfasser: Simon, Daniel K., Tröger, David, Schenk, Tony, Dirnstorfer, Ingo, Fengler, Franz P. G., Jordan, Paul M., Krause, Andreas, Mikolajick, Thomas
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Sprache:eng
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Zusammenfassung:Radio frequency (RF) biasing induced by a second plasma source at the substrate is applied to low-temperature sputtering processes for indium tin oxide (ITO) and titanium nitride (TiN) thin films. Investigations on crystal structure and surface morphology show that RF-biased substrate plasma processes result in a changed growth regime with different grain sizes and orientations than those produced by processes without a substrate bias. The influence of the RF bias is shown comparatively for reactive RF-sputtered ITO and reactive direct-current-sputtered TiN. The ITO layers exhibit an improved electrical resistivity of 0.5 mΩ cm and an optical absorption coefficient of 0.5 × 104 cm−1 without substrate heating. Room-temperature sputtered TiN layers are deposited that possess a resistivity (0.1 mΩ cm) of 3 orders of magnitude lower than, and a density (5.4 g/cm3) up to 45% greater than, those obtained from layers grown using the standard process without a substrate plasma.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.4936257