Dynamic atomic layer epitaxy of InN on/in +c-GaN matrix: Effect of “In+N” coverage and capping timing by GaN layer on effective InN thickness

The growth front in the self-organizing and self-limiting epitaxy of ∼1 monolayer (ML)-thick InN wells on/in +c-GaN matrix by molecular beam epitaxy (MBE) has been studied in detail, with special attention given to the behavior and role of the N atoms. The growth temperatures of interest are above 6...

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Veröffentlicht in:	Applied physics letters 2016-01, Vol.108 (2)
Hauptverfasser:	Yoshikawa, Akihiko, Kusakabe, Kazuhide, Hashimoto, Naoki, Hwang, Eun-Sook, Itoi, Takaomi
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Atomic layer epitaxy ATOMS Bonding strength Capping CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CRITICAL TEMPERATURE Epitaxial growth GALLIUM NITRIDES INDIUM NITRIDES LAYERS MOLECULAR BEAM EPITAXY THICKNESS Wells
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