Thermal transport across few-layer boron nitride encased by silica

Two dimensional hexagonal boron nitride (h-BN) attracted attention for use in applications. Using equilibrium molecular dynamics, we examine the phonon transport in few-layer h-BN encased by silica (SiO2). We report large interfacial thermal resistances, of about 2.2 × 10−8 m2 K W−1, which are not s...

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Veröffentlicht in:Applied physics letters 2015-07, Vol.107 (3)
Hauptverfasser: Ni, Yuxiang, Jiang, Jiechao, Meletis, Efstathios, Dumitricǎ, Traian
Format: Artikel
Sprache:eng
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Zusammenfassung:Two dimensional hexagonal boron nitride (h-BN) attracted attention for use in applications. Using equilibrium molecular dynamics, we examine the phonon transport in few-layer h-BN encased by silica (SiO2). We report large interfacial thermal resistances, of about 2.2 × 10−8 m2 K W−1, which are not sensitive to the number of h-BN layers or the SiO2 crystallinity. The h-BN/SiO2 superlattices exhibit ultra-low thermal conductivities across layers, as low as 0.3 W/m K. They are structurally stable up to 2000 K while retaining the low-thermal conductivity attributes. Our simulations indicate that incorporation of h-BN layers and nanoparticles in silica could establish thermal barriers and heat spreading paths, useful for high performance coatings and electronic device applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4927240