Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology

External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionizati...

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Veröffentlicht in:Applied physics letters 2015-11, Vol.107 (18)
Hauptverfasser: Llorens, J. M., Wewior, L., Cardozo de Oliveira, E. R., Ulloa, J. M., Utrilla, A. D., Guzmán, A., Hierro, A., Alén, B.
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Sprache:eng
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Zusammenfassung:External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuously from quantum dot-like to quantum ring-like as a function of the external bias. All these properties have great potential in advanced electro-optical applications and in the investigation of fundamental spin-orbit phenomena.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4934841