Synthesis and characterization of nitrogen-doped graphene films using C{sub 5}NCl{sub 5}

To modify the electrical properties of graphene, we have synthesized nitrogen-doped graphene films using pentachloropyridine and methane by a two-step growth process with the N/C ratio of 2.5%–4%. The nitrogen-doped graphene presoma synthesized at 350 °C can be transformed into nitrogen-doped graphene fragments by annealing at 1000 °C. The introduction of methane as a second carbon source plays a key role in the formation of continuous uniform nitrogen-doped graphene films. The as-obtained N-doped graphene films exhibit n-type conduction with the electron mobility and density of 375 cm{sup 2} V{sup −1} s{sup −1} and 2.38 × 10{sup 13 }cm{sup −2} at room temperature, respectively.