High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs{sub 1-x}Sb{sub x}/AlAs{sub 1−x}Sb{sub x} superlattices

A high-performance short-wavelength infrared n-i-p photodiode based on InAs/InAs{sub 1−x}Sb{sub x}/AlAs{sub 1−x}Sb{sub x} type-II superlattices on GaSb substrate has been demonstrated. The device is designed to have a 50% cut-off wavelength of ∼1.8 μm at 300 K. The photodetector exhibited a room-temperature (300 K) peak responsivity of 0.47 A/W at 1.6 μm, corresponding to a quantum efficiency of 37% at zero bias under front-side illumination, without any anti-reflection coating. With an R × A of 285 Ω cm{sup 2} and a dark current density of 9.6 × 10{sup −5} A/cm{sup 2} under −50 mV applied bias at 300 K, the photodiode exhibited a specific detectivity of 6.45 × 10{sup 10 }cm Hz{sup 1/2}/W. At 200 K, the photodiode exhibited a dark current density of 1.3 × 10{sup −8} A/cm{sup 2} and a quantum efficiency of 36%, resulting in a detectivity of 5.66 × 10{sup 12 }cm Hz{sup 1/2}/W.