Electron mobility enhancement in (100) oxygen-inserted silicon channel

High performance improvement (+88% in peak Gm and >30% in linear and saturation region drain currents) was observed for N-MOSFETs with Oxygen-Inserted (OI) Si channel. From TCAD analysis of the C-V measurement data, the improvement was confirmed to be due to electron mobility enhancement of the O...

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Veröffentlicht in:	Applied physics letters 2015-09, Vol.107 (12)
Hauptverfasser:	Xu, Nuo, Takeuchi, Hideki, Hytha, Marek, Cody, Nyles W., Stephenson, Robert J., Kwak, Byungil, Cha, Seon Yong, Mears, Robert J., King Liu, Tsu-Jae
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Backscattering CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Computer simulation Conduction bands COULOMB SCATTERING Diffusion barriers Diffusion effects Diffusion layers ELECTRON MOBILITY Electrons LAYERS MOSFET MOSFETs OXYGEN QUANTUM MECHANICS RUTHERFORD BACKSCATTERING SPECTROSCOPY SILICON SIMULATION Surface roughness SURFACES
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