A WSe{sub 2}/MoSe{sub 2} heterostructure photovoltaic device
We report on the photovoltaic effect in a WSe{sub 2}/MoSe{sub 2} heterojunction, demonstrating gate tunable current rectification with on/off ratios of over 10{sup 4}. Spatially resolved photocurrent maps show the photovoltaic effect to originate from the entire overlap region. Compared to WSe{sub 2...
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Veröffentlicht in: | Applied physics letters 2015-09, Vol.107 (12) |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | We report on the photovoltaic effect in a WSe{sub 2}/MoSe{sub 2} heterojunction, demonstrating gate tunable current rectification with on/off ratios of over 10{sup 4}. Spatially resolved photocurrent maps show the photovoltaic effect to originate from the entire overlap region. Compared to WSe{sub 2}/MoS{sub 2} heterostructures, our devices perform better at long wavelengths and yield higher quantum efficiencies, in agreement with Shockley-Queisser theory. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4931621 |