A WSe{sub 2}/MoSe{sub 2} heterostructure photovoltaic device

We report on the photovoltaic effect in a WSe{sub 2}/MoSe{sub 2} heterojunction, demonstrating gate tunable current rectification with on/off ratios of over 10{sup 4}. Spatially resolved photocurrent maps show the photovoltaic effect to originate from the entire overlap region. Compared to WSe{sub 2...

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Veröffentlicht in:Applied physics letters 2015-09, Vol.107 (12)
Hauptverfasser: Flöry, Nikolaus, Jain, Achint, Bharadwaj, Palash, Parzefall, Markus, Novotny, Lukas, Taniguchi, Takashi, Watanabe, Kenji
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Sprache:eng
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Zusammenfassung:We report on the photovoltaic effect in a WSe{sub 2}/MoSe{sub 2} heterojunction, demonstrating gate tunable current rectification with on/off ratios of over 10{sup 4}. Spatially resolved photocurrent maps show the photovoltaic effect to originate from the entire overlap region. Compared to WSe{sub 2}/MoS{sub 2} heterostructures, our devices perform better at long wavelengths and yield higher quantum efficiencies, in agreement with Shockley-Queisser theory.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4931621