Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application

Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application

In this study, we achieved bidirectional threshold switching (TS) for selector applications in a Ag-Cu2O-based programmable-metallization-cell device by engineering the stack wherein Ag was intentionally incorporated in the oxide (Cu2O) layer by a simple approach comprising co-sputtering and subsequ...

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Veröffentlicht in:Applied physics letters 2015-09, Vol.107 (11)
Hauptverfasser: Song, Jeonghwan, Prakash, Amit, Lee, Daeseok, Woo, Jiyong, Cha, Euijun, Lee, Sangheon, Hwang, Hyunsang
Format: Artikel
Sprache:eng
Schlagworte:
ANNEALING
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COPPER OXIDES
DISTRIBUTION
Energy transmission
FILAMENTS
LAYERS
Metallizing
Microstructure
Multilayers
RUPTURES
Rupturing
SPECTROSCOPY
SPUTTERING
Switching
TRANSMISSION ELECTRON MICROSCOPY
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Beschreibung
Zusammenfassung:In this study, we achieved bidirectional threshold switching (TS) for selector applications in a Ag-Cu2O-based programmable-metallization-cell device by engineering the stack wherein Ag was intentionally incorporated in the oxide (Cu2O) layer by a simple approach comprising co-sputtering and subsequent optimized annealing. The distribution of the Ag was directly confirmed by transmission electron microscopy and energy dispersive spectroscopy line profiling. The observed TS occurred because of the spontaneous self-rupturing of the unstable Ag filament that formed in the oxide layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4931136