Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here, we report the characterization of a quantum dot coupled to a localized electronic state and present evi...

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Veröffentlicht in:Applied physics letters 2015-09, Vol.107 (10)
Hauptverfasser: Foote, Ryan H., Ward, Daniel R., Thorgrimsson, Brandur, Savage, D. E., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A., Prance, J. R., Gamble, John King, Nielsen, Erik, Saraiva, A. L.
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Sprache:eng
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Zusammenfassung:Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here, we report the characterization of a quantum dot coupled to a localized electronic state and present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through the device enable the determination that the most likely location of the localized state is consistent with a location in the quantum well near the edge of the quantum dot. Our results are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.
ISSN:0003-6951
1077-3118