Substrate temperature control for the formation of metal nanohelices by glancing angle deposition
The targets of this study are to develop a device to precisely control the temperature during glancing angle deposition, to make films consisting of low melting temperature metal nanoelements with a controlled shape (helix), and to explore the substrate temperature for controlling the nanoshapes. A...
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| Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2015-11, Vol.33 (6) |
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| container_title | Journal of vacuum science & technology. A, Vacuum, surfaces, and films |
| container_volume | 33 |
| creator | Sumigawa, Takashi Tanie, Hisashi Sakurai, Atsushi Iwata, Kazuya Chen, Shaoguang Kitamura, Takayuki |
| description | The targets of this study are to develop a device to precisely control the temperature during glancing angle deposition, to make films consisting of low melting temperature metal nanoelements with a controlled shape (helix), and to explore the substrate temperature for controlling the nanoshapes. A vacuum evaporation system capable of both cooling a substrate and measurement of its temperature was used to form thin films consisting of arrays of Cu and Al nanohelices on silicon substrates by maintaining the substrate temperature at Ts/Tm |
| doi_str_mv | 10.1116/1.4932516 |
| format | Article |
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A vacuum evaporation system capable of both cooling a substrate and measurement of its temperature was used to form thin films consisting of arrays of Cu and Al nanohelices on silicon substrates by maintaining the substrate temperature at Ts/Tm < 0.22 (Ts is the substrate temperature and Tm is the melting temperature of target material). The critical Ts/Tm to produce Cu and Al nanohelices corresponds to the transitional homologous temperature between zones I and II in the structure zone model for the solid film, where surface diffusion becomes dominant. X-ray diffraction analysis indicated that the Cu and Al nanohelix thin films were composed of coarse oriented grains with diameters of several tens of nanometers.</description><identifier>ISSN: 0734-2101</identifier><identifier>EISSN: 1520-8559</identifier><identifier>DOI: 10.1116/1.4932516</identifier><language>eng</language><publisher>United States</publisher><subject>COOLING ; DEPOSITION ; DIFFUSION ; ENGINEERING ; MELTING POINTS ; METALS ; SHAPE ; SILICON ; SOLIDS ; SUBSTRATES ; SURFACES ; TEMPERATURE CONTROL ; THIN FILMS ; VACUUM EVAPORATION ; X-RAY DIFFRACTION ; ZONES</subject><ispartof>Journal of vacuum science & technology. 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X-ray diffraction analysis indicated that the Cu and Al nanohelix thin films were composed of coarse oriented grains with diameters of several tens of nanometers.</description><subject>COOLING</subject><subject>DEPOSITION</subject><subject>DIFFUSION</subject><subject>ENGINEERING</subject><subject>MELTING POINTS</subject><subject>METALS</subject><subject>SHAPE</subject><subject>SILICON</subject><subject>SOLIDS</subject><subject>SUBSTRATES</subject><subject>SURFACES</subject><subject>TEMPERATURE CONTROL</subject><subject>THIN FILMS</subject><subject>VACUUM EVAPORATION</subject><subject>X-RAY DIFFRACTION</subject><subject>ZONES</subject><issn>0734-2101</issn><issn>1520-8559</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNotkE9LAzEUxIMoWKsHv0HAk4et7yWb_XOUolUoeFDPSzb70kZ2k5Kkh357W9rTzOE3AzOMPSIsELF6wUXZSqGwumIzVAKKRqn2ms2glmUhEPCW3aX0BwBCQDVj-nvfpxx1Jp5p2tHR7SNxE3yOYeQ2RJ63dNJJZxc8D5ZPlPXIvfZhS6MzlHh_4JtRe-P8hmu_GYkPtAvJnRL37MbqMdHDRefs9_3tZ_lRrL9Wn8vXdWGkkLkwKA01AFiXjWprMrXRFWirVE8WtSCEVpVyGPoeJQ6NIoC2krXpbYuDLOWcPZ17Q8quS8ZlMtvjDk8md0KUdVup5kg9nykTQ0qRbLeLbtLx0CF0pwc77C4Pyn8PgGPh</recordid><startdate>20151101</startdate><enddate>20151101</enddate><creator>Sumigawa, Takashi</creator><creator>Tanie, Hisashi</creator><creator>Sakurai, Atsushi</creator><creator>Iwata, Kazuya</creator><creator>Chen, Shaoguang</creator><creator>Kitamura, Takayuki</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20151101</creationdate><title>Substrate temperature control for the formation of metal nanohelices by glancing angle deposition</title><author>Sumigawa, Takashi ; Tanie, Hisashi ; Sakurai, Atsushi ; Iwata, Kazuya ; Chen, Shaoguang ; Kitamura, Takayuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-c13ce8001748597ec7ca60af55bef1a2e109543ddbb131d85e009637cbf91d343</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>COOLING</topic><topic>DEPOSITION</topic><topic>DIFFUSION</topic><topic>ENGINEERING</topic><topic>MELTING POINTS</topic><topic>METALS</topic><topic>SHAPE</topic><topic>SILICON</topic><topic>SOLIDS</topic><topic>SUBSTRATES</topic><topic>SURFACES</topic><topic>TEMPERATURE CONTROL</topic><topic>THIN FILMS</topic><topic>VACUUM EVAPORATION</topic><topic>X-RAY DIFFRACTION</topic><topic>ZONES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sumigawa, Takashi</creatorcontrib><creatorcontrib>Tanie, Hisashi</creatorcontrib><creatorcontrib>Sakurai, Atsushi</creatorcontrib><creatorcontrib>Iwata, Kazuya</creatorcontrib><creatorcontrib>Chen, Shaoguang</creatorcontrib><creatorcontrib>Kitamura, Takayuki</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of vacuum science & technology. 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A, Vacuum, surfaces, and films</jtitle><date>2015-11-01</date><risdate>2015</risdate><volume>33</volume><issue>6</issue><issn>0734-2101</issn><eissn>1520-8559</eissn><abstract>The targets of this study are to develop a device to precisely control the temperature during glancing angle deposition, to make films consisting of low melting temperature metal nanoelements with a controlled shape (helix), and to explore the substrate temperature for controlling the nanoshapes. A vacuum evaporation system capable of both cooling a substrate and measurement of its temperature was used to form thin films consisting of arrays of Cu and Al nanohelices on silicon substrates by maintaining the substrate temperature at Ts/Tm < 0.22 (Ts is the substrate temperature and Tm is the melting temperature of target material). The critical Ts/Tm to produce Cu and Al nanohelices corresponds to the transitional homologous temperature between zones I and II in the structure zone model for the solid film, where surface diffusion becomes dominant. X-ray diffraction analysis indicated that the Cu and Al nanohelix thin films were composed of coarse oriented grains with diameters of several tens of nanometers.</abstract><cop>United States</cop><doi>10.1116/1.4932516</doi></addata></record> |
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| ispartof | Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2015-11, Vol.33 (6) |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | COOLING DEPOSITION DIFFUSION ENGINEERING MELTING POINTS METALS SHAPE SILICON SOLIDS SUBSTRATES SURFACES TEMPERATURE CONTROL THIN FILMS VACUUM EVAPORATION X-RAY DIFFRACTION ZONES |
| title | Substrate temperature control for the formation of metal nanohelices by glancing angle deposition |
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