Observation of dynamics of impurity photoconductivity in n-GaAs caused by electron cooling
Experimental investigation of the time dependence of impurity photoconductivity in n -GaAs is carried out upon pulsed optical excitation. It is shown that a change in the photoconductivity is determined mainly by electron cooling in the first 20 ns after photoexcitation. A theoretical model for desc...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2015-01, Vol.49 (1), p.113-117 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 49 |
| creator | Aleshkin, V. Ya Morozov, S. V. Rumyantsev, V. V. Tuzov, I. V. |
| description | Experimental investigation of the time dependence of impurity photoconductivity in
n
-GaAs is carried out upon pulsed optical excitation. It is shown that a change in the photoconductivity is determined mainly by electron cooling in the first 20 ns after photoexcitation. A theoretical model for describing the dependences under observation is proposed. |
| doi_str_mv | 10.1134/S1063782615010030 |
| format | Article |
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| ispartof | Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.113-117 |
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| subjects | 2014 Analysis ELECTRON COOLING Electrons EXCITATION Gallium arsenide GALLIUM ARSENIDES IMPURITIES Magnetic Materials Magnetism March 10–14 MATERIALS SCIENCE N-TYPE CONDUCTORS Nizhni Novgorod PHOTOCONDUCTIVITY Physics Physics and Astronomy TIME DEPENDENCE XVIII Symposium “Nanophysics and Nanoelectronics” |
| title | Observation of dynamics of impurity photoconductivity in n-GaAs caused by electron cooling |
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