Observation of dynamics of impurity photoconductivity in n-GaAs caused by electron cooling

Observation of dynamics of impurity photoconductivity in n-GaAs caused by electron cooling

Experimental investigation of the time dependence of impurity photoconductivity in n -GaAs is carried out upon pulsed optical excitation. It is shown that a change in the photoconductivity is determined mainly by electron cooling in the first 20 ns after photoexcitation. A theoretical model for desc...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-01, Vol.49 (1), p.113-117
Hauptverfasser: Aleshkin, V. Ya, Morozov, S. V., Rumyantsev, V. V., Tuzov, I. V.
Format: Artikel
Sprache:eng
Schlagworte:
2014
Analysis
ELECTRON COOLING
Electrons
EXCITATION
Gallium arsenide
GALLIUM ARSENIDES
IMPURITIES
Magnetic Materials
Magnetism
March 10–14
MATERIALS SCIENCE
N-TYPE CONDUCTORS
Nizhni Novgorod
PHOTOCONDUCTIVITY
Physics
Physics and Astronomy
TIME DEPENDENCE
XVIII Symposium “Nanophysics and Nanoelectronics”
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Zusammenfassung:Experimental investigation of the time dependence of impurity photoconductivity in n -GaAs is carried out upon pulsed optical excitation. It is shown that a change in the photoconductivity is determined mainly by electron cooling in the first 20 ns after photoexcitation. A theoretical model for describing the dependences under observation is proposed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615010030