Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer

The luminescence properties of light-emitting diodes based on GaAs/InGaAs heterostructures containing Mn-doped layers are studied. The dependences of the degree of electroluminescence circular polarization on the growth parameters, specifically, the Mn content and the hole concentration are obtained...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-01, Vol.50 (1), p.1-7
Hauptverfasser: Rykov, A. V., Dorokhin, M. V., Malysheva, E. I., Demina, P. B., Vikhrova, O. V., Zdoroveishev, A. V.
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Sprache:eng
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Zusammenfassung:The luminescence properties of light-emitting diodes based on GaAs/InGaAs heterostructures containing Mn-doped layers are studied. The dependences of the degree of electroluminescence circular polarization on the growth parameters, specifically, the Mn content and the hole concentration are obtained. A steady increase in the degree of electroluminescence circular polarization and in the Curie temperature of the ferromagnetic structure with increasing hole concentration is observed, and a change in sign of the degree of circular polarization under variations in the Mn content is revealed. The data are interpreted on the basis of well-known models of ferromagnetism in structures based on ferromagnetic semiconductors.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261601019X