Optical properties of PbS thin films
The complex dielectric function of PbS thin films is studied by spectroscopic ellipsometry in the spectral range from 0.74 to 6.45 eV at a temperature of 293 K. The critical energies are determined to be E 1 = 3.53 eV and E 2 = 4.57 eV. For both energy regions, the best fit is attained at the critic...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2016-01, Vol.50 (1), p.50-53 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The complex dielectric function of PbS thin films is studied by spectroscopic ellipsometry in the spectral range from 0.74 to 6.45 eV at a temperature of 293 K. The critical energies are determined to be
E
1
= 3.53 eV and
E
2
= 4.57 eV. For both energy regions, the best fit is attained at the critical point 2D (
m
= 0). In addition, the Raman spectra and the optical-absorption spectra of PbS thin films are studied. From the dependence of the quantity (α
h
ν)
2
on the photon energy
h
ν, the band gap is established at
E
g
= 0.37 eV. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782616010036 |