Optical properties of PbS thin films

The complex dielectric function of PbS thin films is studied by spectroscopic ellipsometry in the spectral range from 0.74 to 6.45 eV at a temperature of 293 K. The critical energies are determined to be E 1 = 3.53 eV and E 2 = 4.57 eV. For both energy regions, the best fit is attained at the critic...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-01, Vol.50 (1), p.50-53
Hauptverfasser: Akhmedov, O. R., Guseinaliyev, M. G., Abdullaev, N. A., Abdullaev, N. M., Babaev, S. S., Kasumov, N. A.
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Sprache:eng
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Zusammenfassung:The complex dielectric function of PbS thin films is studied by spectroscopic ellipsometry in the spectral range from 0.74 to 6.45 eV at a temperature of 293 K. The critical energies are determined to be E 1 = 3.53 eV and E 2 = 4.57 eV. For both energy regions, the best fit is attained at the critical point 2D ( m = 0). In addition, the Raman spectra and the optical-absorption spectra of PbS thin films are studied. From the dependence of the quantity (α h ν) 2 on the photon energy h ν, the band gap is established at E g = 0.37 eV.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616010036