High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate

We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500 000 cm2/Vs at sheet charge density of 8 × 1011 cm−2 and approaching 100 000 cm2/Vs near the charge neutrality...

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Veröffentlicht in:	Applied physics letters 2015-01, Vol.106 (3)
Hauptverfasser:	Nguyen, Binh-Minh, Yi, Wei, Noah, Ramsey, Thorp, Jacob, Sokolich, Marko
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics CAPACITANCE CHARGE DENSITY CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ELECTRON MOBILITY GALLIUM ANTIMONIDES INDIUM ARSENIDES QUANTUM WELLS SHEETS SUBSTRATES
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