High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate

We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500 000 cm2/Vs at sheet charge density of 8 × 1011 cm−2 and approaching 100 000 cm2/Vs near the charge neutrality...

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Veröffentlicht in:Applied physics letters 2015-01, Vol.106 (3)
Hauptverfasser: Nguyen, Binh-Minh, Yi, Wei, Noah, Ramsey, Thorp, Jacob, Sokolich, Marko
Format: Artikel
Sprache:eng
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Zusammenfassung:We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500 000 cm2/Vs at sheet charge density of 8 × 1011 cm−2 and approaching 100 000 cm2/Vs near the charge neutrality point. Lattice matching between the quantum well structure and the substrate eliminates the need for a thick buffer, enabling large back gate capacitance and efficient coupling with the conduction channels in the quantum wells. As a result, quantum Hall effects are observed in both electron and hole regimes across the hybridization gap.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4906589