Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP
Extended wavelength photoluminescence emission within the technologically important 2–5 μm spectral range has been demonstrated from InAs1−xNx and In1−yGayAs1−xNx type I quantum wells grown onto InP. Samples containing N ∼ 1% and 2% exhibited 4 K photoluminescence emission at 2.0 and 2.7 μm, respect...
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Veröffentlicht in: | Applied physics letters 2015-06, Vol.106 (23) |
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Sprache: | eng |
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Zusammenfassung: | Extended wavelength photoluminescence emission within the technologically important 2–5 μm spectral range has been demonstrated from InAs1−xNx and In1−yGayAs1−xNx type I quantum wells grown onto InP. Samples containing N ∼ 1% and 2% exhibited 4 K photoluminescence emission at 2.0 and 2.7 μm, respectively. The emission wavelength was extended out to 2.9 μm (3.3 μm at 300 K) using a metamorphic buffer layer to accommodate the lattice mismatch. The quantum wells were grown by molecular beam epitaxy and found to be of a high structural perfection as evidenced in the high resolution x-ray diffraction measurements. The photoluminescence was more intense from the quantum wells grown on the metamorphic buffer layer and persisted up to room temperature. The mid-infrared emission spectra were analysed, and the observed transitions were found to be in good agreement with the calculated emission energies. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4922590 |