Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

Extended wavelength photoluminescence emission within the technologically important 2–5 μm spectral range has been demonstrated from InAs1−xNx and In1−yGayAs1−xNx type I quantum wells grown onto InP. Samples containing N ∼ 1% and 2% exhibited 4 K photoluminescence emission at 2.0 and 2.7 μm, respect...

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Veröffentlicht in:Applied physics letters 2015-06, Vol.106 (23)
Hauptverfasser: Wheatley, R., Kesaria, M., Mawst, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. D., Krier, A.
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Sprache:eng
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Zusammenfassung:Extended wavelength photoluminescence emission within the technologically important 2–5 μm spectral range has been demonstrated from InAs1−xNx and In1−yGayAs1−xNx type I quantum wells grown onto InP. Samples containing N ∼ 1% and 2% exhibited 4 K photoluminescence emission at 2.0 and 2.7 μm, respectively. The emission wavelength was extended out to 2.9 μm (3.3 μm at 300 K) using a metamorphic buffer layer to accommodate the lattice mismatch. The quantum wells were grown by molecular beam epitaxy and found to be of a high structural perfection as evidenced in the high resolution x-ray diffraction measurements. The photoluminescence was more intense from the quantum wells grown on the metamorphic buffer layer and persisted up to room temperature. The mid-infrared emission spectra were analysed, and the observed transitions were found to be in good agreement with the calculated emission energies.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4922590