The electron spin resonance study of heavily nitrogen doped 6H SiC crystals

The electron spin resonance study of heavily nitrogen doped 6H SiC crystals

The magnetic and electronic properties of heavily doped n-type 6H SiC samples with a nitrogen concentration of 1019 and 4 × 1019 cm−3 were studied with electron spin resonance (ESR) at 5–150 K. The observed ESR line with a Dysonian lineshape was attributed to the conduction electrons (CE). The CE ES...

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Veröffentlicht in:Journal of applied physics 2015-01, Vol.117 (4)
1. Verfasser: Savchenko, D. V.
Format: Artikel
Sprache:eng
Schlagworte:
ANTIFERROMAGNETISM
Applied physics
CONCENTRATION RATIO
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Conduction bands
Conduction electrons
COUPLING
CRYSTALS
Donors (electronic)
DOPED MATERIALS
Electron paramagnetic resonance
Electron spin
ELECTRON SPIN RESONANCE
Electronic properties
ELECTRONS
Exchanging
Hopping conduction
LANDE FACTOR
Magnetic induction
MAGNETIC MOMENTS
Magnetic properties
METALS
MICROWAVE RADIATION
N-TYPE CONDUCTORS
Nitrogen
PHASE TRANSFORMATIONS
SILICON CARBIDES
SPIN
Spin resonance
TEMPERATURE DEPENDENCE
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Beschreibung
Zusammenfassung:The magnetic and electronic properties of heavily doped n-type 6H SiC samples with a nitrogen concentration of 1019 and 4 × 1019 cm−3 were studied with electron spin resonance (ESR) at 5–150 K. The observed ESR line with a Dysonian lineshape was attributed to the conduction electrons (CE). The CE ESR (CESR) line was fitted by Lorentzian (insulating phase) (T  50 K, respectively.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4906618