Performance regeneration of InGaZnO transistors with ultra-thin channels
Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, an...
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| Veröffentlicht in: | Applied physics letters 2015-03, Vol.106 (9) |
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| container_title | Applied physics letters |
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| creator | Zhang, Binglei Li, He Zhang, Xijian Luo, Yi Wang, Qingpu Song, Aimin |
| description | Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. The stability of the encapsulated devices was also studied over a four month period. |
| doi_str_mv | 10.1063/1.4914296 |
| format | Article |
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At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. The stability of the encapsulated devices was also studied over a four month period.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4914296</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>AMORPHOUS STATE ; Applied physics ; CARRIER MOBILITY ; COMPARATIVE EVALUATIONS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DIAGRAMS ; ELECTRIC POTENTIAL ; Encapsulation ; Gallium ; GALLIUM COMPOUNDS ; Indium ; INDIUM COMPOUNDS ; Indium gallium zinc oxide ; LAYERS ; PMMA ; Polymethyl methacrylate ; REGENERATION ; Semiconductor devices ; SEMICONDUCTOR MATERIALS ; Thin film transistors ; THIN FILMS ; Threshold voltage ; TRANSISTORS ; Zinc oxide ; ZINC OXIDES</subject><ispartof>Applied physics letters, 2015-03, Vol.106 (9)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-8fdffffcf16ec00745225806910084064de5b60712da8975d7c81096126215c23</citedby><cites>FETCH-LOGICAL-c285t-8fdffffcf16ec00745225806910084064de5b60712da8975d7c81096126215c23</cites><orcidid>0000-0003-1485-9097 ; 0000-0001-6550-518X ; 0000-0001-5391-7320</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,777,781,882,27905,27906</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22412778$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhang, Binglei</creatorcontrib><creatorcontrib>Li, He</creatorcontrib><creatorcontrib>Zhang, Xijian</creatorcontrib><creatorcontrib>Luo, Yi</creatorcontrib><creatorcontrib>Wang, Qingpu</creatorcontrib><creatorcontrib>Song, Aimin</creatorcontrib><title>Performance regeneration of InGaZnO transistors with ultra-thin channels</title><title>Applied physics letters</title><description>Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. 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At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. The stability of the encapsulated devices was also studied over a four month period.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4914296</doi><orcidid>https://orcid.org/0000-0003-1485-9097</orcidid><orcidid>https://orcid.org/0000-0001-6550-518X</orcidid><orcidid>https://orcid.org/0000-0001-5391-7320</orcidid></addata></record> |
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| ispartof | Applied physics letters, 2015-03, Vol.106 (9) |
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| language | eng |
| recordid | cdi_osti_scitechconnect_22412778 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | AMORPHOUS STATE Applied physics CARRIER MOBILITY COMPARATIVE EVALUATIONS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DIAGRAMS ELECTRIC POTENTIAL Encapsulation Gallium GALLIUM COMPOUNDS Indium INDIUM COMPOUNDS Indium gallium zinc oxide LAYERS PMMA Polymethyl methacrylate REGENERATION Semiconductor devices SEMICONDUCTOR MATERIALS Thin film transistors THIN FILMS Threshold voltage TRANSISTORS Zinc oxide ZINC OXIDES |
| title | Performance regeneration of InGaZnO transistors with ultra-thin channels |
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