Performance regeneration of InGaZnO transistors with ultra-thin channels

Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, an...

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Veröffentlicht in:Applied physics letters 2015-03, Vol.106 (9)
Hauptverfasser: Zhang, Binglei, Li, He, Zhang, Xijian, Luo, Yi, Wang, Qingpu, Song, Aimin
Format: Artikel
Sprache:eng
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Zusammenfassung:Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. The stability of the encapsulated devices was also studied over a four month period.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4914296