Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La2O3 as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and o...

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Veröffentlicht in:Applied physics letters 2015-02, Vol.106 (7)
Hauptverfasser: Zhang, Jingyun, Lou, Xiabing, Si, Mengwei, Wu, Heng, Shao, Jiayi, Manfra, Michael J., Gordon, Roy G., Ye, Peide D.
Format: Artikel
Sprache:eng
Schlagworte:
ANISOTROPY
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
DIELECTRIC MATERIALS
EPITAXY
ETCHING
Field effect transistors
Gallium arsenide
GALLIUM ARSENIDES
LANTHANUM OXIDES
LAYERS
MOSFET
MOSFETs
Semiconductor devices
SEMICONDUCTOR MATERIALS
Silicon
SUBSTRATES
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Zusammenfassung:Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La2O3 as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an ION/IOFF ratio of greater than 107.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4913431