Highly conductive indium nanowires deposited on silicon by dip-pen nanolithography

In this paper, we developed a new dip-pen nanolithography (DPN) method. Using this method, we fabricated conductive nanowires with diameters of 30–50 nm on silicon substrates. To accomplish this, indium was transferred from an atomic force microscopy tip to the surface by applying a potential differ...

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Veröffentlicht in:	Journal of applied physics 2015-04, Vol.117 (14)
Hauptverfasser:	Kozhukhov, Anton, Klimenko, Anatoliy, Shcheglov, Dmitriy, Volodin, Vladimir, Karnaeva, Natalya, Latyshev, Alexander
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics ATOMIC FORCE MICROSCOPY CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Conductivity ELECTRIC CONDUCTIVITY INDIUM Micrometers Nanotechnology NANOWIRES POTENTIALS SILICON Silicon substrates SUBSTRATES SURFACES
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