Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products
Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface...
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| Veröffentlicht in: | Journal of applied physics 2014-12, Vol.116 (22) |
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| creator | Nakazaki, Nobuya Tsuda, Hirotaka Takao, Yoshinori Eriguchi, Koji Ono, Kouichi |
| description | Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on Ei: one is the roughening mode at low Ei |
| doi_str_mv | 10.1063/1.4903956 |
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The experiments revealed two modes of surface roughening which occur depending on Ei: one is the roughening mode at low Ei < 200–300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing Ei, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher Ei, where the rms surface roughness decreases substantially with Ei down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on Ei were also observed in the etch rate versus Ei curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing Ei were found to correspond to changes in the predominant ion flux from feed gas ions Clx+ to ionized etch products SiClx+ caused by the increased etch rates at increased Ei, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4903956</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; CHLORINE ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; Computer simulation ; COMPUTERIZED SIMULATION ; Density distribution ; DIAGRAMS ; Electric power distribution ; ETCHING ; Evolution ; Flow velocity ; GAS FLOW ; Ion flux ; IONS ; Low level ; Molecular dynamics ; MOLECULAR DYNAMICS METHOD ; MONTE CARLO METHOD ; PLASMA DIAGNOSTICS ; Plasma etching ; Plasmas (physics) ; Power spectral density ; Roughening ; ROUGHNESS ; SILICON ; SILICON CHLORIDES ; Smoothing ; SPECTRAL DENSITY ; STEADY-STATE CONDITIONS ; STOCHASTIC PROCESSES ; Surface roughness ; SURFACES</subject><ispartof>Journal of applied physics, 2014-12, Vol.116 (22)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c459t-f85df962e3c064ba135be9e43ff833f1fcf7612eefa374ff353087bd261dbaa03</citedby><cites>FETCH-LOGICAL-c459t-f85df962e3c064ba135be9e43ff833f1fcf7612eefa374ff353087bd261dbaa03</cites><orcidid>0000-0002-3468-8857</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22402759$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Nakazaki, Nobuya</creatorcontrib><creatorcontrib>Tsuda, Hirotaka</creatorcontrib><creatorcontrib>Takao, Yoshinori</creatorcontrib><creatorcontrib>Eriguchi, Koji</creatorcontrib><creatorcontrib>Ono, Kouichi</creatorcontrib><title>Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products</title><title>Journal of applied physics</title><description>Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on Ei: one is the roughening mode at low Ei < 200–300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing Ei, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher Ei, where the rms surface roughness decreases substantially with Ei down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on Ei were also observed in the etch rate versus Ei curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing Ei were found to correspond to changes in the predominant ion flux from feed gas ions Clx+ to ionized etch products SiClx+ caused by the increased etch rates at increased Ei, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.</description><subject>Applied physics</subject><subject>CHLORINE</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>Computer simulation</subject><subject>COMPUTERIZED SIMULATION</subject><subject>Density distribution</subject><subject>DIAGRAMS</subject><subject>Electric power distribution</subject><subject>ETCHING</subject><subject>Evolution</subject><subject>Flow velocity</subject><subject>GAS FLOW</subject><subject>Ion flux</subject><subject>IONS</subject><subject>Low level</subject><subject>Molecular dynamics</subject><subject>MOLECULAR DYNAMICS METHOD</subject><subject>MONTE CARLO METHOD</subject><subject>PLASMA DIAGNOSTICS</subject><subject>Plasma etching</subject><subject>Plasmas (physics)</subject><subject>Power spectral density</subject><subject>Roughening</subject><subject>ROUGHNESS</subject><subject>SILICON</subject><subject>SILICON CHLORIDES</subject><subject>Smoothing</subject><subject>SPECTRAL DENSITY</subject><subject>STEADY-STATE CONDITIONS</subject><subject>STOCHASTIC PROCESSES</subject><subject>Surface roughness</subject><subject>SURFACES</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkF1LwzAUhoMoOKcX_oOAV150JjlN23gnwy8YCDKvQ5qebBlbM5MW0V9v6wZevZzDw8vDS8g1ZzPOCrjjs1wxULI4IRPOKpWVUrJTMmFM8KxSpTonFyltGOO8AjUhevkV6C40mGhwNPXRGYs0hn61xta3K9r0cYz91qSdodjZ9XiOrN96G9p7-h62OD58aP0PNn8M3cfQ9LZLl-TMmW3Cq2NOycfT43L-ki3enl_nD4vM5lJ1matk41QhECwr8tpwkDUqzMG5CsBxZ11ZcIHoDJS5cyCBVWXdiII3tTEMpuTm0BtS53WyvkO7HvRatJ0WImeilOqfGvQ-e0yd3oQ-toOYFlwUuQIB1UDdHigbQ0oRnd5HvzPxW3Omx5U118eV4RdxBW7S</recordid><startdate>20141214</startdate><enddate>20141214</enddate><creator>Nakazaki, Nobuya</creator><creator>Tsuda, Hirotaka</creator><creator>Takao, Yoshinori</creator><creator>Eriguchi, Koji</creator><creator>Ono, Kouichi</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-3468-8857</orcidid></search><sort><creationdate>20141214</creationdate><title>Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products</title><author>Nakazaki, Nobuya ; Tsuda, Hirotaka ; Takao, Yoshinori ; Eriguchi, Koji ; Ono, Kouichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c459t-f85df962e3c064ba135be9e43ff833f1fcf7612eefa374ff353087bd261dbaa03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>CHLORINE</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>Computer simulation</topic><topic>COMPUTERIZED SIMULATION</topic><topic>Density distribution</topic><topic>DIAGRAMS</topic><topic>Electric power distribution</topic><topic>ETCHING</topic><topic>Evolution</topic><topic>Flow velocity</topic><topic>GAS FLOW</topic><topic>Ion flux</topic><topic>IONS</topic><topic>Low level</topic><topic>Molecular dynamics</topic><topic>MOLECULAR DYNAMICS METHOD</topic><topic>MONTE CARLO METHOD</topic><topic>PLASMA DIAGNOSTICS</topic><topic>Plasma etching</topic><topic>Plasmas (physics)</topic><topic>Power spectral density</topic><topic>Roughening</topic><topic>ROUGHNESS</topic><topic>SILICON</topic><topic>SILICON CHLORIDES</topic><topic>Smoothing</topic><topic>SPECTRAL DENSITY</topic><topic>STEADY-STATE CONDITIONS</topic><topic>STOCHASTIC PROCESSES</topic><topic>Surface roughness</topic><topic>SURFACES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakazaki, Nobuya</creatorcontrib><creatorcontrib>Tsuda, Hirotaka</creatorcontrib><creatorcontrib>Takao, Yoshinori</creatorcontrib><creatorcontrib>Eriguchi, Koji</creatorcontrib><creatorcontrib>Ono, Kouichi</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nakazaki, Nobuya</au><au>Tsuda, Hirotaka</au><au>Takao, Yoshinori</au><au>Eriguchi, Koji</au><au>Ono, Kouichi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products</atitle><jtitle>Journal of applied physics</jtitle><date>2014-12-14</date><risdate>2014</risdate><volume>116</volume><issue>22</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on Ei: one is the roughening mode at low Ei < 200–300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing Ei, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher Ei, where the rms surface roughness decreases substantially with Ei down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on Ei were also observed in the etch rate versus Ei curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing Ei were found to correspond to changes in the predominant ion flux from feed gas ions Clx+ to ionized etch products SiClx+ caused by the increased etch rates at increased Ei, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4903956</doi><orcidid>https://orcid.org/0000-0002-3468-8857</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Applied physics CHLORINE CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Computer simulation COMPUTERIZED SIMULATION Density distribution DIAGRAMS Electric power distribution ETCHING Evolution Flow velocity GAS FLOW Ion flux IONS Low level Molecular dynamics MOLECULAR DYNAMICS METHOD MONTE CARLO METHOD PLASMA DIAGNOSTICS Plasma etching Plasmas (physics) Power spectral density Roughening ROUGHNESS SILICON SILICON CHLORIDES Smoothing SPECTRAL DENSITY STEADY-STATE CONDITIONS STOCHASTIC PROCESSES Surface roughness SURFACES |
| title | Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products |
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