Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface...

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Veröffentlicht in:	Journal of applied physics 2014-12, Vol.116 (22)
Hauptverfasser:	Nakazaki, Nobuya, Tsuda, Hirotaka, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics CHLORINE CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Computer simulation COMPUTERIZED SIMULATION Density distribution DIAGRAMS Electric power distribution ETCHING Evolution Flow velocity GAS FLOW Ion flux IONS Low level Molecular dynamics MOLECULAR DYNAMICS METHOD MONTE CARLO METHOD PLASMA DIAGNOSTICS Plasma etching Plasmas (physics) Power spectral density Roughening ROUGHNESS SILICON SILICON CHLORIDES Smoothing SPECTRAL DENSITY STEADY-STATE CONDITIONS STOCHASTIC PROCESSES Surface roughness SURFACES
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Zusammenfassung:	Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on Ei: one is the roughening mode at low Ei
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.4903956