Si etching with reactive neutral beams of very low energy

A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF4 and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of applied physics 2014-12, Vol.116 (22)
Hauptverfasser:	Hara, Yasuhiro, Hamagaki, Manabu, Mise, Takaya, Iwata, Naotaka, Hara, Tamio
Format:	Artikel
Sprache:	eng
Schlagworte:	ACCELERATION ANISOTROPY Applied physics BEAMS Bonding strength CARBON TETRAFLUORIDE CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ELECTRIC POTENTIAL ETCHING Neutral beams PLASMA Plasmas (physics) RADICALS SURFACES VELOCITY
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue	22
container_start_page
container_title	Journal of applied physics
container_volume	116
creator	Hara, Yasuhiro Hamagaki, Manabu Mise, Takaya Iwata, Naotaka Hara, Tamio
description	A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF4 and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.
doi_str_mv	10.1063/1.4903974
format	Article
fullrecord	<record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22402758</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2126492924</sourcerecordid><originalsourceid>FETCH-LOGICAL-c245t-d57df3791ae174751afc9cbabe7fff023577b32802c38e18f4181f5255237de33</originalsourceid><addsrcrecordid>eNpFkMtKQzEURYMoWKsD_yDgyMHVnDyaZCjFFxQcqOOQm560Ke29NUlb-vdWWnC0J4vNYhFyC-wB2Eg8woO0TFgtz8gAmLGNVoqdkwFjHBpjtb0kV6UsGAMwwg6I_UwUa5inbkZ3qc5pRh9q2iLtcFOzX9IW_arQPtIt5j1d9juKHebZ_ppcRL8seHPaIfl-ef4avzWTj9f38dOkCVyq2kyVnkahLXgELbUCH4MNrW9RxxgZF0rrVnDDeBAGwUQJBqLiSnGhpyjEkNwdf_tSkyshVQzz0Hcdhuo4l4xrZf6pde5_NliqW_Sb3B3EHAc-kpZbLg_U_ZEKuS8lY3TrnFY-7x0w99fPgTv1E7-wY1-j</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2126492924</pqid></control><display><type>article</type><title>Si etching with reactive neutral beams of very low energy</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Hara, Yasuhiro ; Hamagaki, Manabu ; Mise, Takaya ; Iwata, Naotaka ; Hara, Tamio</creator><creatorcontrib>Hara, Yasuhiro ; Hamagaki, Manabu ; Mise, Takaya ; Iwata, Naotaka ; Hara, Tamio</creatorcontrib><description>A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF4 and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4903974</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ACCELERATION ; ANISOTROPY ; Applied physics ; BEAMS ; Bonding strength ; CARBON TETRAFLUORIDE ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; ELECTRIC POTENTIAL ; ETCHING ; Neutral beams ; PLASMA ; Plasmas (physics) ; RADICALS ; SURFACES ; VELOCITY</subject><ispartof>Journal of applied physics, 2014-12, Vol.116 (22)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c245t-d57df3791ae174751afc9cbabe7fff023577b32802c38e18f4181f5255237de33</cites><orcidid>0000-0002-9037-8685</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22402758$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Hara, Yasuhiro</creatorcontrib><creatorcontrib>Hamagaki, Manabu</creatorcontrib><creatorcontrib>Mise, Takaya</creatorcontrib><creatorcontrib>Iwata, Naotaka</creatorcontrib><creatorcontrib>Hara, Tamio</creatorcontrib><title>Si etching with reactive neutral beams of very low energy</title><title>Journal of applied physics</title><description>A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF4 and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.</description><subject>ACCELERATION</subject><subject>ANISOTROPY</subject><subject>Applied physics</subject><subject>BEAMS</subject><subject>Bonding strength</subject><subject>CARBON TETRAFLUORIDE</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>ELECTRIC POTENTIAL</subject><subject>ETCHING</subject><subject>Neutral beams</subject><subject>PLASMA</subject><subject>Plasmas (physics)</subject><subject>RADICALS</subject><subject>SURFACES</subject><subject>VELOCITY</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkMtKQzEURYMoWKsD_yDgyMHVnDyaZCjFFxQcqOOQm560Ke29NUlb-vdWWnC0J4vNYhFyC-wB2Eg8woO0TFgtz8gAmLGNVoqdkwFjHBpjtb0kV6UsGAMwwg6I_UwUa5inbkZ3qc5pRh9q2iLtcFOzX9IW_arQPtIt5j1d9juKHebZ_ppcRL8seHPaIfl-ef4avzWTj9f38dOkCVyq2kyVnkahLXgELbUCH4MNrW9RxxgZF0rrVnDDeBAGwUQJBqLiSnGhpyjEkNwdf_tSkyshVQzz0Hcdhuo4l4xrZf6pde5_NliqW_Sb3B3EHAc-kpZbLg_U_ZEKuS8lY3TrnFY-7x0w99fPgTv1E7-wY1-j</recordid><startdate>20141214</startdate><enddate>20141214</enddate><creator>Hara, Yasuhiro</creator><creator>Hamagaki, Manabu</creator><creator>Mise, Takaya</creator><creator>Iwata, Naotaka</creator><creator>Hara, Tamio</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-9037-8685</orcidid></search><sort><creationdate>20141214</creationdate><title>Si etching with reactive neutral beams of very low energy</title><author>Hara, Yasuhiro ; Hamagaki, Manabu ; Mise, Takaya ; Iwata, Naotaka ; Hara, Tamio</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c245t-d57df3791ae174751afc9cbabe7fff023577b32802c38e18f4181f5255237de33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>ACCELERATION</topic><topic>ANISOTROPY</topic><topic>Applied physics</topic><topic>BEAMS</topic><topic>Bonding strength</topic><topic>CARBON TETRAFLUORIDE</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>ELECTRIC POTENTIAL</topic><topic>ETCHING</topic><topic>Neutral beams</topic><topic>PLASMA</topic><topic>Plasmas (physics)</topic><topic>RADICALS</topic><topic>SURFACES</topic><topic>VELOCITY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hara, Yasuhiro</creatorcontrib><creatorcontrib>Hamagaki, Manabu</creatorcontrib><creatorcontrib>Mise, Takaya</creatorcontrib><creatorcontrib>Iwata, Naotaka</creatorcontrib><creatorcontrib>Hara, Tamio</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hara, Yasuhiro</au><au>Hamagaki, Manabu</au><au>Mise, Takaya</au><au>Iwata, Naotaka</au><au>Hara, Tamio</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Si etching with reactive neutral beams of very low energy</atitle><jtitle>Journal of applied physics</jtitle><date>2014-12-14</date><risdate>2014</risdate><volume>116</volume><issue>22</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF4 and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4903974</doi><orcidid>https://orcid.org/0000-0002-9037-8685</orcidid></addata></record>
fulltext	fulltext
identifier	ISSN: 0021-8979
ispartof	Journal of applied physics, 2014-12, Vol.116 (22)
issn	0021-8979 1089-7550
language	eng
recordid	cdi_osti_scitechconnect_22402758
source	AIP Journals Complete; Alma/SFX Local Collection
subjects	ACCELERATION ANISOTROPY Applied physics BEAMS Bonding strength CARBON TETRAFLUORIDE CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ELECTRIC POTENTIAL ETCHING Neutral beams PLASMA Plasmas (physics) RADICALS SURFACES VELOCITY
title	Si etching with reactive neutral beams of very low energy
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T23%3A57%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Si%20etching%20with%20reactive%20neutral%20beams%20of%20very%20low%20energy&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Hara,%20Yasuhiro&rft.date=2014-12-14&rft.volume=116&rft.issue=22&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.4903974&rft_dat=%3Cproquest_osti_%3E2126492924%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2126492924&rft_id=info:pmid/&rfr_iscdi=true