Si etching with reactive neutral beams of very low energy

A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF4 and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate...

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Veröffentlicht in:Journal of applied physics 2014-12, Vol.116 (22)
Hauptverfasser: Hara, Yasuhiro, Hamagaki, Manabu, Mise, Takaya, Iwata, Naotaka, Hara, Tamio
Format: Artikel
Sprache:eng
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Zusammenfassung:A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF4 and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4903974