Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon

The enhanced diffusivity of oxygen in heavily boron doped silicon was obtained by analyzing oxygen out-diffusion profile changes found at the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate by secondary ion mass spectrometry. It was found t...

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Veröffentlicht in:Journal of applied physics 2014-11, Vol.116 (19)
Hauptverfasser: Torigoe, Kazuhisa, Fujise, Jun, Ono, Toshiaki, Nakamura, Kozo
Format: Artikel
Sprache:eng
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Zusammenfassung:The enhanced diffusivity of oxygen in heavily boron doped silicon was obtained by analyzing oxygen out-diffusion profile changes found at the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate by secondary ion mass spectrometry. It was found that the diffusivity is proportional to the square root of boron concentration in the range of 1018 cm−3–1019 cm−3 at temperatures from 750 °C to 950 °C. The model based on the diffusion of oxygen dimers in double positive charge state could explain the enhanced diffusion. We have concluded that oxygen diffusion enhanced in heavily boron-doped silicon is attributed to oxygen dimers ionized depending on Fermi level position.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4901987