Terahertz photoluminescence from S.I.-GaAs by below gap excitation via EL2 level

Terahertz emission by radiative transitions in semi-conductors via shallow impurity states is investigated. We report on the observation of terahertz photoluminescence from S.I.-GaAs by below gap excitation via EL2 level which is located at the center of band gap. In order to investigate the teraher...

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Veröffentlicht in:	Applied physics letters 2015-01, Vol.106 (2)
Hauptverfasser:	Oyama, Yutaka, Dezaki, Hikari, Shimizu, Yusaku, Maeda, Kensaku
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Conductors Emission analysis EMISSION SPECTRA ENERGY GAP EXCITATION Gallium arsenide GALLIUM ARSENIDES IMPURITIES METASTABLE STATES Peak frequency PHOTOLUMINESCENCE TEMPERATURE DEPENDENCE Terahertz frequencies THERMAL RECOVERY THZ RANGE
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