Terahertz photoluminescence from S.I.-GaAs by below gap excitation via EL2 level

Terahertz photoluminescence from S.I.-GaAs by below gap excitation via EL2 level

Terahertz emission by radiative transitions in semi-conductors via shallow impurity states is investigated. We report on the observation of terahertz photoluminescence from S.I.-GaAs by below gap excitation via EL2 level which is located at the center of band gap. In order to investigate the teraher...

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Veröffentlicht in:Applied physics letters 2015-01, Vol.106 (2)
Hauptverfasser: Oyama, Yutaka, Dezaki, Hikari, Shimizu, Yusaku, Maeda, Kensaku
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Conductors
Emission analysis
EMISSION SPECTRA
ENERGY GAP
EXCITATION
Gallium arsenide
GALLIUM ARSENIDES
IMPURITIES
METASTABLE STATES
Peak frequency
PHOTOLUMINESCENCE
TEMPERATURE DEPENDENCE
Terahertz frequencies
THERMAL RECOVERY
THZ RANGE
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Zusammenfassung:Terahertz emission by radiative transitions in semi-conductors via shallow impurity states is investigated. We report on the observation of terahertz photoluminescence from S.I.-GaAs by below gap excitation via EL2 level which is located at the center of band gap. In order to investigate the terahertz wave emission mechanisms, the emission spectra and temperature dependence of the emission intensity are evaluated. It is shown that intense terahertz emission from S.I.-GaAs over 120 K is observed due to the thermal recovery of photo-quenched EL2 meta-stable state, and that the emission peak frequency looks to be attributed to the shallow level energy in GaAs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4906039