Controlled removal of amorphous Se capping layer from a topological insulator

Controlled removal of amorphous Se capping layer from a topological insulator

We report on the controlled removal of an amorphous Se capping layer from Bi2Te3 and Bi2Se3 topological insulators. We show that the Se coalesces into micron-sized islands before desorbing from the surface at a temperature of ∼150 °C. In situ Auger Electron Spectroscopy reveals that Se replaces a si...

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Veröffentlicht in:Applied physics letters 2014-12, Vol.105 (24)
Hauptverfasser: Virwani, Kumar, Harrison, Sara E., Pushp, Aakash, Topuria, Teya, Delenia, Eugene, Rice, Philip, Kellock, Andrew, Collins-McIntyre, Liam, Harris, James, Hesjedal, Thorsten, Parkin, Stuart
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
AUGER ELECTRON SPECTROSCOPY
Backscattering
BISMUTH SELENIDES
BISMUTH TELLURIDES
Capping
Coalescing
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL LATTICES
LAYERS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SURFACES
Topological insulators
TOPOLOGY
TRANSMISSION ELECTRON MICROSCOPY
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Zusammenfassung:We report on the controlled removal of an amorphous Se capping layer from Bi2Te3 and Bi2Se3 topological insulators. We show that the Se coalesces into micron-sized islands before desorbing from the surface at a temperature of ∼150 °C. In situ Auger Electron Spectroscopy reveals that Se replaces a significant fraction of the Te near the top surface of the Bi2Te3. Rutherford Backscattering Spectrometry and Transmission Electron Microscopy show that after heating, Se has been incorporated in the Bi2Te3 lattice down to ∼7 nm from its top surface while remaining iso-structural.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4904803