Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN
We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condi...
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Veröffentlicht in: | Applied physics letters 2014-11, Vol.105 (19) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 °C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4901938 |