Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condi...

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Veröffentlicht in:Applied physics letters 2014-11, Vol.105 (19)
Hauptverfasser: Hiroki, Masanobu, Kumakura, Kazuhide, Kobayashi, Yasuyuki, Akasaka, Tetsuya, Makimoto, Toshiki, Yamamoto, Hideki
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Sprache:eng
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Zusammenfassung:We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 °C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4901938