Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height

The modulation of Schottky barrier height of metal/Ge inserting an amorphous Ge layer has been demonstrated. It is interested that the Schottky barrier height of Al/amorphous-Ge/n-Ge junctions is oscillated with increase of the a-Ge thickness from 0 to 10 nm, and when the thickness reaches above 10 ...

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Veröffentlicht in:Applied physics letters 2014-11, Vol.105 (19)
Hauptverfasser: Liu, Hanhui, Wang, Peng, Qi, Dongfeng, Li, Xin, Han, Xiang, Wang, Chen, Chen, Songyan, Li, Cheng, Huang, Wei
Format: Artikel
Sprache:eng
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Zusammenfassung:The modulation of Schottky barrier height of metal/Ge inserting an amorphous Ge layer has been demonstrated. It is interested that the Schottky barrier height of Al/amorphous-Ge/n-Ge junctions is oscillated with increase of the a-Ge thickness from 0 to 10 nm, and when the thickness reaches above 10 nm, the Al/amorphous-Ge/n-Ge shows ohmic characteristics. Electron hopping through localized states of a-Ge layer, the alleviation of metal induced gap states, as well as the termination of dangling bonds at the amorphous-Ge/n-Ge interface are proposed to explain the anomalous modulation of Schottky barrier height.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4901421