Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties
We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D2O) on the n-type 4H-SiC carbon face (0001¯) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same wit...
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Veröffentlicht in: | Applied physics letters 2014-11, Vol.105 (19) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D2O) on the n-type 4H-SiC carbon face (0001¯) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D2O exposure is proportional to the total D amount at the interface. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4901719 |