Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D2O) on the n-type 4H-SiC carbon face (0001¯) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same wit...

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Veröffentlicht in:Applied physics letters 2014-11, Vol.105 (19)
Hauptverfasser: Liu, Gang, Xu, Can, Yakshinskiy, Boris, Wielunski, Leszek, Gustafsson, Torgny, Bloch, Joseph, Dhar, Sarit, Feldman, Leonard C.
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Sprache:eng
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Zusammenfassung:We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D2O) on the n-type 4H-SiC carbon face (0001¯) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D2O exposure is proportional to the total D amount at the interface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4901719