Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-term...

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Veröffentlicht in:Applied physics letters 2014-11, Vol.105 (18)
Hauptverfasser: Hashimoto, T., Kamikawa, S., Soriano, D., Pedersen, J. G., Roche, S., Haruyama, J.
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Sprache:eng
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Zusammenfassung:Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO2/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO2/FGNPA junction also drastically enhances TMR ratios up to ∼100%.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4901279