Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

In this study, the impact of aluminum ion implantation (Al I/I) on random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect-transistors (pMOSFETs) was investigated. The trap parameters of HK/MG pMOSFETs with Al I/I, such as trap energy level, capture time and emission time, activation energies for capture and emission, and trap location in the gate dielectric, were determined. The configuration coordinate diagram was also established. It was observed that the implanted Al could fill defects and form a thin Al2O3 layer and thus increase the tunneling barrier height for holes. It was also observed that the trap position in the Al I/I samples was lower due to the Al I/I-induced dipole at the HfO2/SiO2 interface.