Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures

We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001)Bi2Te3||(001)Cr2Ge2Te6 and (110)Bi2Te3||(100)Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a shar...

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Veröffentlicht in:Applied physics letters 2014-08, Vol.105 (5)
Hauptverfasser: Alegria, L. D., Ji, H., Yao, N., Clarke, J. J., Cava, R. J., Petta, J. R.
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container_issue 5
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container_title Applied physics letters
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creator Alegria, L. D.
Ji, H.
Yao, N.
Clarke, J. J.
Cava, R. J.
Petta, J. R.
description We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001)Bi2Te3||(001)Cr2Ge2Te6 and (110)Bi2Te3||(100)Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr2Ge2Te6. The 61 K Curie temperature of Cr2Ge2Te6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.
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subjects Applied physics
BISMUTH TELLURIDES
CHROMIUM COMPOUNDS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURIE POINT
Curie temperature
Electromagnetism
Electrons
EPITAXY
FERROMAGNETIC MATERIALS
Ferromagnetism
GERMANIUM TELLURIDES
HALL EFFECT
Heterostructures
LAYERS
Magnetism
STOICHIOMETRY
TRANSMISSION ELECTRON MICROSCOPY
VAN DER WAALS FORCES
title Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures
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