Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures
We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001)Bi2Te3||(001)Cr2Ge2Te6 and (110)Bi2Te3||(100)Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a shar...
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creator | Alegria, L. D. Ji, H. Yao, N. Clarke, J. J. Cava, R. J. Petta, J. R. |
description | We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001)Bi2Te3||(001)Cr2Ge2Te6 and (110)Bi2Te3||(100)Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr2Ge2Te6. The 61 K Curie temperature of Cr2Ge2Te6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE. |
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D. ; Ji, H. ; Yao, N. ; Clarke, J. J. ; Cava, R. J. ; Petta, J. R.</creator><creatorcontrib>Alegria, L. D. ; Ji, H. ; Yao, N. ; Clarke, J. J. ; Cava, R. J. ; Petta, J. R.</creatorcontrib><description>We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001)Bi2Te3||(001)Cr2Ge2Te6 and (110)Bi2Te3||(100)Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr2Ge2Te6. The 61 K Curie temperature of Cr2Ge2Te6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4892353</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; BISMUTH TELLURIDES ; CHROMIUM COMPOUNDS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CURIE POINT ; Curie temperature ; Electromagnetism ; Electrons ; EPITAXY ; FERROMAGNETIC MATERIALS ; Ferromagnetism ; GERMANIUM TELLURIDES ; HALL EFFECT ; Heterostructures ; LAYERS ; Magnetism ; STOICHIOMETRY ; TRANSMISSION ELECTRON MICROSCOPY ; VAN DER WAALS FORCES</subject><ispartof>Applied physics letters, 2014-08, Vol.105 (5)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-b59adb8ba3917e9fcb8c99af765f4a176525bc6cc0ef4f9ffecfe946953284633</citedby><cites>FETCH-LOGICAL-c351t-b59adb8ba3917e9fcb8c99af765f4a176525bc6cc0ef4f9ffecfe946953284633</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,782,786,887,27931,27932</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22314524$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Alegria, L. D.</creatorcontrib><creatorcontrib>Ji, H.</creatorcontrib><creatorcontrib>Yao, N.</creatorcontrib><creatorcontrib>Clarke, J. J.</creatorcontrib><creatorcontrib>Cava, R. J.</creatorcontrib><creatorcontrib>Petta, J. R.</creatorcontrib><title>Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures</title><title>Applied physics letters</title><description>We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001)Bi2Te3||(001)Cr2Ge2Te6 and (110)Bi2Te3||(100)Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr2Ge2Te6. The 61 K Curie temperature of Cr2Ge2Te6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.</description><subject>Applied physics</subject><subject>BISMUTH TELLURIDES</subject><subject>CHROMIUM COMPOUNDS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CURIE POINT</subject><subject>Curie temperature</subject><subject>Electromagnetism</subject><subject>Electrons</subject><subject>EPITAXY</subject><subject>FERROMAGNETIC MATERIALS</subject><subject>Ferromagnetism</subject><subject>GERMANIUM TELLURIDES</subject><subject>HALL EFFECT</subject><subject>Heterostructures</subject><subject>LAYERS</subject><subject>Magnetism</subject><subject>STOICHIOMETRY</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>VAN DER WAALS FORCES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFUE1LAzEQDaJgrR78BwuePGxNMpvdzVGKWmHBix4lZOOk3ZJuapI9-O9NaaGnYd485n0Qcs_ogtEantiiaiUHARdkxmjTlMBYe0lmlFIoaynYNbmJcZtXwQFm5LvTYY2FHv1OOz_FYqWdK9BaNKkYxsJiCPm0HjENJgNxcjr5UCa_986vB6PdGS02mDD4mMJk0hQw3pIrq13Eu9Ock6_Xl8_lquw-3t6Xz11pQLBU9kLqn77tNUjWoLSmb42U2ja1sJVmeXDRm9oYiray8mDOoqxyHOBtVQPMycPxb9YeVDRDQrMxfhxzCsU5sErw6szaB_87YUxq66cwZmOKM16LLEMPrMcjy-QkMaBV-zDsdPhTjKpDx4qpU8fwDw5rb8A</recordid><startdate>20140804</startdate><enddate>20140804</enddate><creator>Alegria, L. 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D.</creatorcontrib><creatorcontrib>Ji, H.</creatorcontrib><creatorcontrib>Yao, N.</creatorcontrib><creatorcontrib>Clarke, J. J.</creatorcontrib><creatorcontrib>Cava, R. J.</creatorcontrib><creatorcontrib>Petta, J. R.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Alegria, L. D.</au><au>Ji, H.</au><au>Yao, N.</au><au>Clarke, J. J.</au><au>Cava, R. J.</au><au>Petta, J. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures</atitle><jtitle>Applied physics letters</jtitle><date>2014-08-04</date><risdate>2014</risdate><volume>105</volume><issue>5</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001)Bi2Te3||(001)Cr2Ge2Te6 and (110)Bi2Te3||(100)Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr2Ge2Te6. The 61 K Curie temperature of Cr2Ge2Te6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4892353</doi></addata></record> |
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subjects | Applied physics BISMUTH TELLURIDES CHROMIUM COMPOUNDS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CURIE POINT Curie temperature Electromagnetism Electrons EPITAXY FERROMAGNETIC MATERIALS Ferromagnetism GERMANIUM TELLURIDES HALL EFFECT Heterostructures LAYERS Magnetism STOICHIOMETRY TRANSMISSION ELECTRON MICROSCOPY VAN DER WAALS FORCES |
title | Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures |
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