Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures
We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001)Bi2Te3||(001)Cr2Ge2Te6 and (110)Bi2Te3||(100)Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a shar...
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Veröffentlicht in: | Applied physics letters 2014-08, Vol.105 (5) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001)Bi2Te3||(001)Cr2Ge2Te6 and (110)Bi2Te3||(100)Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr2Ge2Te6. The 61 K Curie temperature of Cr2Ge2Te6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4892353 |