Electrical, optical, and material characterizations of blue InGaN light emitting diodes submitted to reverse-bias stress in water vapor condition

In this paper, we investigate degradation of InGaN/GaN light emitting diodes (LEDs) under reverse-bias operations in water vapor and dry air. To examine failure origins, electrical characterizations including current-voltage, breakdown current profiles, optical measurement, and multiple material ana...

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Veröffentlicht in:Journal of applied physics 2014-09, Vol.116 (9)
Hauptverfasser: Chen, Hsiang, Chu, Yu-Cheng, Shei, Shih-Chang, Chen, Yun-Ti, Chen, Chian-You
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Sprache:eng
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Zusammenfassung:In this paper, we investigate degradation of InGaN/GaN light emitting diodes (LEDs) under reverse-bias operations in water vapor and dry air. To examine failure origins, electrical characterizations including current-voltage, breakdown current profiles, optical measurement, and multiple material analyses were performed. Our findings indicate that the diffusion of indium atoms in water vapor can expedite degradation. Investigation of reverse-bias stress can help provide insight into the effects of water vapor on LEDs.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4894831