Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes

The resonant tunneling mechanism of the GaN based resonant tunneling diode (RTD) with an InGaN sub-quantum-well has been investigated by means of numerical simulation. At resonant-state, Electrons in the InGaN/InAlN/GaN/InAlN RTD tunnel from the emitter region through the aligned discrete energy lev...

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Veröffentlicht in:Journal of applied physics 2014-08, Vol.116 (7)
Hauptverfasser: Chen, Haoran, Yang, Lin'an, Hao, Yue
Format: Artikel
Sprache:eng
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Zusammenfassung:The resonant tunneling mechanism of the GaN based resonant tunneling diode (RTD) with an InGaN sub-quantum-well has been investigated by means of numerical simulation. At resonant-state, Electrons in the InGaN/InAlN/GaN/InAlN RTD tunnel from the emitter region through the aligned discrete energy levels in the InGaN sub-quantum-well and GaN main-quantum-well into the collector region. The implantation of the InGaN sub-quantum-well alters the dominant transport mechanism, increase the transmission coefficient and give rise to the peak current and peak-to-valley current ratio. We also demonstrate that the most pronounced negative-differential-resistance characteristic can be achieved by choosing appropriately the In composition of InxGa1−xN at around x = 0.06.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4893561