Charge transport and memristive properties of graphene quantum dots embedded in poly(3-hexylthiophene) matrix

We show that graphene quantum dots (GQD) embedded in a semiconducting poly(3-hexylthiophene) polymeric matrix act as charge trapping nanomaterials. In plane current-voltage (I-V) measurements of thin films realized from this nanocomposite deposited on gold interdigitated electrodes revealed that the...

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Veröffentlicht in:Applied physics letters 2014-08, Vol.105 (8)
Hauptverfasser: Cosmin Obreja, Alexandru, Cristea, Dana, Mihalache, Iuliana, Radoi, Antonio, Gavrila, Raluca, Comanescu, Florin, Kusko, Cristian
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Sprache:eng
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Zusammenfassung:We show that graphene quantum dots (GQD) embedded in a semiconducting poly(3-hexylthiophene) polymeric matrix act as charge trapping nanomaterials. In plane current-voltage (I-V) measurements of thin films realized from this nanocomposite deposited on gold interdigitated electrodes revealed that the GQD enhanced dramatically the hole transport. I-V characteristics exhibited a strong nonlinear behavior and a pinched hysteresis loop, a signature of a memristive response. The transport properties of this nanocomposite were explained in terms of a trap controlled space charge limited current mechanism.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4893919