Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

We describe a CZTSSe (Cu2ZnSn(S1−x,Sex)4) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO2, can be applied in order to reduce the interface recombination and improve the device's open-...

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Veröffentlicht in:	Applied physics letters 2014-07, Vol.105 (4)
Hauptverfasser:	Wu, Wei, Cao, Yanyan, Caspar, Jonathan V., Guo, Qijie, Johnson, Lynda K., Mclean, Robert S., Malajovich, Irina, Choudhury, Kaushik Roy
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Atomic layer epitaxy Buffer layers BUFFERS CAPACITANCE Circuits CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY COPPER COMPOUNDS CURRENTS DEPOSITION DIELECTRIC MATERIALS ELECTRIC CONDUCTIVITY ELECTRIC POTENTIAL Electrical impedance INTERFACES LAYERS Open circuit voltage PASSIVATION Passivity Photovoltaic cells PHOTOVOLTAIC EFFECT RECOMBINATION SELENIUM COMPOUNDS Solar cells SPECTROSCOPY SULFUR COMPOUNDS SURFACES TIN COMPOUNDS Titanium dioxide TITANIUM OXIDES ZINC COMPOUNDS
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Zusammenfassung:	We describe a CZTSSe (Cu2ZnSn(S1−x,Sex)4) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO2, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.4891852