Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

We report an enhancement in light emission and electrical efficiencies of a Si nanocrystal (NC) light-emitting diode (LED) by employing indium tin oxide (ITO) nanowires (NWs). The formed ITO NWs (diameter 

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Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2014-07, Vol.105 (3)
Hauptverfasser: Huh, Chul, Kim, Bong Kyu, Ahn, Chang-Geun, Choi, Chel-Jong, Kim, Sang-Hyeob
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENTS
EFFICIENCY
ELECTRICAL PROPERTIES
EMISSION
INDIUM OXIDES
Indium tin oxides
Light emission
LIGHT EMITTING DIODES
MULTIPLE SCATTERING
Nanocrystals
NANOMATERIALS
NANOSCIENCE AND NANOTECHNOLOGY
NANOWIRES
PHOTONS
Power efficiency
PROBABILITY
QUANTUM WIRES
SILICON
SURFACES
TIN ADDITIONS
VISIBLE RADIATION
WAVEGUIDES
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Zusammenfassung:We report an enhancement in light emission and electrical efficiencies of a Si nanocrystal (NC) light-emitting diode (LED) by employing indium tin oxide (ITO) nanowires (NWs). The formed ITO NWs (diameter 
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4890848