Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates
A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of...
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| Veröffentlicht in: | Applied physics letters 2014-09, Vol.105 (9) |
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| container_title | Applied physics letters |
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| creator | Deen, David A. Storm, David F. Meyer, David J. Bass, Robert Binari, Steven C. Gougousi, Theodosia Evans, Keith R. |
| description | A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm2/V s and sheet resistance of 130 Ω/□ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance. |
| doi_str_mv | 10.1063/1.4895105 |
| format | Article |
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High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm2/V s and sheet resistance of 130 Ω/□ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4895105</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ALUMINIUM NITRIDES ; Aluminum nitride ; Applied physics ; Barriers ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DOPED MATERIALS ; ELECTRIC POTENTIAL ; Electrical resistivity ; ELECTRON MOBILITY ; Epitaxial growth ; GALLIUM NITRIDES ; Heterostructures ; High electron mobility transistors ; HYDRIDES ; MOLECULAR BEAM EPITAXY ; POLARIZATION ; Semiconductor devices ; SUBSTRATES ; TEMPERATURE RANGE 0273-0400 K ; THICKNESS ; TRANSISTORS ; VAPOR PHASE EPITAXY ; Vapor phases</subject><ispartof>Applied physics letters, 2014-09, Vol.105 (9)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c386t-9564e4957fe0da08d3503d0db11b7dbd4f958f1ef75e85aad78b728c8272f3173</citedby><cites>FETCH-LOGICAL-c386t-9564e4957fe0da08d3503d0db11b7dbd4f958f1ef75e85aad78b728c8272f3173</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22311040$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Deen, David A.</creatorcontrib><creatorcontrib>Storm, David F.</creatorcontrib><creatorcontrib>Meyer, David J.</creatorcontrib><creatorcontrib>Bass, Robert</creatorcontrib><creatorcontrib>Binari, Steven C.</creatorcontrib><creatorcontrib>Gougousi, Theodosia</creatorcontrib><creatorcontrib>Evans, Keith R.</creatorcontrib><title>Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates</title><title>Applied physics letters</title><description>A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm2/V s and sheet resistance of 130 Ω/□ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.</description><subject>ALUMINIUM NITRIDES</subject><subject>Aluminum nitride</subject><subject>Applied physics</subject><subject>Barriers</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DOPED MATERIALS</subject><subject>ELECTRIC POTENTIAL</subject><subject>Electrical resistivity</subject><subject>ELECTRON MOBILITY</subject><subject>Epitaxial growth</subject><subject>GALLIUM NITRIDES</subject><subject>Heterostructures</subject><subject>High electron mobility transistors</subject><subject>HYDRIDES</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>POLARIZATION</subject><subject>Semiconductor devices</subject><subject>SUBSTRATES</subject><subject>TEMPERATURE RANGE 0273-0400 K</subject><subject>THICKNESS</subject><subject>TRANSISTORS</subject><subject>VAPOR PHASE EPITAXY</subject><subject>Vapor phases</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpNkU1LAzEQhoMoWD8O_oOAJw_bJpvNJnuU4kdB9KLnkM1O2mib1EyK-BP8125R0NMwzPO-zMxLyAVnU85aMePTRneSM3lAJpwpVQnO9SGZMMZE1Y6TY3KC-Dq2shZiQr4Wm611hSZPe5tzgEzLKri3CIg0RVqyjRiwpEy3kH3KGxsd0BDp9fpxdmcf6SosVxTW4Eoe-U3qwzqUz39CpMucPuLezWeACouNQ4hLulfjrscRLYBn5MjbNcL5bz0lL7c3z_P76uHpbjG_fqic0G2pOtk20HRSeWCDZXoQkomBDT3nvRr6ofGd1J6DVxK0tHZQule1drpWtRdciVNy-eObsASDLhRwK5diHC8wdT3-izXsj9rm9L4DLOY17XIcFzM1r1vZMs66kbr6oVxOiBm82eawsfnTcGb2eRhufvMQ3_s1fh4</recordid><startdate>20140901</startdate><enddate>20140901</enddate><creator>Deen, David A.</creator><creator>Storm, David F.</creator><creator>Meyer, David J.</creator><creator>Bass, Robert</creator><creator>Binari, Steven C.</creator><creator>Gougousi, Theodosia</creator><creator>Evans, Keith R.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140901</creationdate><title>Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates</title><author>Deen, David A. ; 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| ispartof | Applied physics letters, 2014-09, Vol.105 (9) |
| issn | 0003-6951 1077-3118 |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | ALUMINIUM NITRIDES Aluminum nitride Applied physics Barriers CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DOPED MATERIALS ELECTRIC POTENTIAL Electrical resistivity ELECTRON MOBILITY Epitaxial growth GALLIUM NITRIDES Heterostructures High electron mobility transistors HYDRIDES MOLECULAR BEAM EPITAXY POLARIZATION Semiconductor devices SUBSTRATES TEMPERATURE RANGE 0273-0400 K THICKNESS TRANSISTORS VAPOR PHASE EPITAXY Vapor phases |
| title | Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates |
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