Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates
A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of...
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Veröffentlicht in: | Applied physics letters 2014-09, Vol.105 (9) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm2/V s and sheet resistance of 130 Ω/□ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4895105 |